JPH0133380B2 - - Google Patents

Info

Publication number
JPH0133380B2
JPH0133380B2 JP58166647A JP16664783A JPH0133380B2 JP H0133380 B2 JPH0133380 B2 JP H0133380B2 JP 58166647 A JP58166647 A JP 58166647A JP 16664783 A JP16664783 A JP 16664783A JP H0133380 B2 JPH0133380 B2 JP H0133380B2
Authority
JP
Japan
Prior art keywords
door
opening
closing
doors
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58166647A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6060060A (ja
Inventor
Koichi Kai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58166647A priority Critical patent/JPS6060060A/ja
Priority to US06/675,863 priority patent/US4565601A/en
Publication of JPS6060060A publication Critical patent/JPS6060060A/ja
Publication of JPH0133380B2 publication Critical patent/JPH0133380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Analytical Chemistry (AREA)
  • Power-Operated Mechanisms For Wings (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Lock And Its Accessories (AREA)
JP58166647A 1983-09-12 1983-09-12 鉄道車両の扉開閉装置 Granted JPS6060060A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58166647A JPS6060060A (ja) 1983-09-12 1983-09-12 鉄道車両の扉開閉装置
US06/675,863 US4565601A (en) 1983-09-12 1984-11-28 Method and apparatus for controlling sample temperature

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58166647A JPS6060060A (ja) 1983-09-12 1983-09-12 鉄道車両の扉開閉装置

Publications (2)

Publication Number Publication Date
JPS6060060A JPS6060060A (ja) 1985-04-06
JPH0133380B2 true JPH0133380B2 (en]) 1989-07-13

Family

ID=15835144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58166647A Granted JPS6060060A (ja) 1983-09-12 1983-09-12 鉄道車両の扉開閉装置

Country Status (2)

Country Link
US (1) US4565601A (en])
JP (1) JPS6060060A (en])

Families Citing this family (279)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239624A (ja) * 1985-04-16 1986-10-24 Toshiba Mach Co Ltd ロ−デイング装置およびロ−デイング方法
JPS6218028A (ja) * 1985-07-16 1987-01-27 Toshiba Corp デイスカム装置
US4615755A (en) * 1985-08-07 1986-10-07 The Perkin-Elmer Corporation Wafer cooling and temperature control for a plasma etching system
JPH0773104B2 (ja) * 1986-02-14 1995-08-02 富士通株式会社 レジスト剥離方法
US4724621A (en) * 1986-04-17 1988-02-16 Varian Associates, Inc. Wafer processing chuck using slanted clamping pins
JPH0698292B2 (ja) * 1986-07-03 1994-12-07 忠弘 大見 超高純度ガスの供給方法及び供給系
EP0258698B1 (en) * 1986-09-05 1997-11-12 Hitachi, Ltd. Dry etching method
JPS6372877A (ja) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd 真空処理装置
DE3633386A1 (de) * 1986-10-01 1988-04-14 Leybold Ag Verfahren und vorrichtung zum behandeln von substraten im vakuum
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4817556A (en) * 1987-05-04 1989-04-04 Varian Associates, Inc. Apparatus for retaining wafers
US5040484A (en) * 1987-05-04 1991-08-20 Varian Associates, Inc. Apparatus for retaining wafers
US4956043A (en) * 1987-05-25 1990-09-11 Hitachi, Ltd. Dry etching apparatus
JPS6411966A (en) * 1987-07-02 1989-01-17 Fujitsu Ltd High-temperature sputtering method
JPH01302726A (ja) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd 反応性イオンエッチング装置
US4913790A (en) * 1988-03-25 1990-04-03 Tokyo Electron Limited Treating method
US4999320A (en) * 1988-03-31 1991-03-12 Texas Instruments Incorporated Method for suppressing ionization avalanches in a helium wafer cooling assembly
US5458724A (en) * 1989-03-08 1995-10-17 Fsi International, Inc. Etch chamber with gas dispersing membrane
KR0156244B1 (ko) * 1989-04-18 1998-12-01 고다까 토시오 플라즈마 처리방법
FR2646861B1 (fr) * 1989-05-09 1991-07-26 Philips Nv Appareil de traitement de substrats plans sous vide partiel
DE3943482C2 (de) * 1989-05-08 1994-07-07 Balzers Hochvakuum Werkstückträger für ein scheibenförmiges Werkstück, sowie Vakuumprozeßkammer
US5177878A (en) * 1989-05-08 1993-01-12 U.S. Philips Corporation Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices
US5248370A (en) * 1989-05-08 1993-09-28 Applied Materials, Inc. Apparatus for heating and cooling semiconductor wafers in semiconductor wafer processing equipment
JPH0327522A (ja) * 1989-06-26 1991-02-05 Hitachi Ltd 半導体基板への薄膜加工方法及びその装置並びに薄膜加工装置
US5002631A (en) * 1990-03-09 1991-03-26 At&T Bell Laboratories Plasma etching apparatus and method
US4971653A (en) * 1990-03-14 1990-11-20 Matrix Integrated Systems Temperature controlled chuck for elevated temperature etch processing
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
JPH04196528A (ja) * 1990-11-28 1992-07-16 Toshiba Corp マグネトロンエッチング装置
US5180478A (en) * 1990-12-19 1993-01-19 Intevac, Inc. Sputter coating source
DE4041029C1 (en) * 1990-12-20 1992-02-06 Siemens Nixdorf Informationssysteme Ag, 4790 Paderborn, De Component cooler for vacuum chamber - has stamper-like heat sink inserted in sealed opening and directly contacting base of component
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5477975A (en) * 1993-10-15 1995-12-26 Applied Materials Inc Plasma etch apparatus with heated scavenging surfaces
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5131460A (en) * 1991-10-24 1992-07-21 Applied Materials, Inc. Reducing particulates during semiconductor fabrication
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5698070A (en) * 1991-12-13 1997-12-16 Tokyo Electron Limited Method of etching film formed on semiconductor wafer
US5306985A (en) * 1992-07-17 1994-04-26 Sematech, Inc. ECR apparatus with magnetic coil for plasma refractive index control
JPH06158361A (ja) * 1992-11-20 1994-06-07 Hitachi Ltd プラズマ処理装置
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
KR100238629B1 (ko) * 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5342476A (en) * 1993-01-21 1994-08-30 Vlsi Technology, Inc. Reduction of polycide residues through helium backside pressure control during dry etching
US5624582A (en) * 1993-01-21 1997-04-29 Vlsi Technology, Inc. Optimization of dry etching through the control of helium backside pressure
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US6544379B2 (en) 1993-09-16 2003-04-08 Hitachi, Ltd. Method of holding substrate and substrate holding system
TW277139B (en]) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
US5885469B1 (en) * 1996-11-05 2000-08-08 Applied Materials Inc Topographical structure of an electrostatic chuck and method of fabricating same
US5729423A (en) * 1994-01-31 1998-03-17 Applied Materials, Inc. Puncture resistant electrostatic chuck
US6278600B1 (en) 1994-01-31 2001-08-21 Applied Materials, Inc. Electrostatic chuck with improved temperature control and puncture resistance
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
KR100404631B1 (ko) * 1994-01-31 2004-02-05 어플라이드 머티어리얼스, 인코포레이티드 두께가일정한절연체막을갖는정전기척
US5491603A (en) * 1994-04-28 1996-02-13 Applied Materials, Inc. Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer
US5521790A (en) * 1994-05-12 1996-05-28 International Business Machines Corporation Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization
JPH07321176A (ja) * 1994-05-20 1995-12-08 Hitachi Ltd 基板搬送方法
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5691876A (en) * 1995-01-31 1997-11-25 Applied Materials, Inc. High temperature polyimide electrostatic chuck
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5708556A (en) * 1995-07-10 1998-01-13 Watkins Johnson Company Electrostatic chuck assembly
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
AU6962196A (en) 1995-09-01 1997-03-27 Advanced Semiconductor Materials America, Inc. Wafer support system
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5609720A (en) * 1995-09-29 1997-03-11 Lam Research Corporation Thermal control of semiconductor wafer during reactive ion etching
US6036878A (en) * 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5948283A (en) * 1996-06-28 1999-09-07 Lam Research Corporation Method and apparatus for enhancing outcome uniformity of direct-plasma processes
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US6033478A (en) * 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control
US5968587A (en) * 1996-11-13 1999-10-19 Applied Materials, Inc. Systems and methods for controlling the temperature of a vapor deposition apparatus
US6019848A (en) * 1996-11-13 2000-02-01 Applied Materials, Inc. Lid assembly for high temperature processing chamber
US6444037B1 (en) 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
US5879574A (en) * 1996-11-13 1999-03-09 Applied Materials, Inc. Systems and methods for detecting end of chamber clean in a thermal (non-plasma) process
US5873781A (en) 1996-11-14 1999-02-23 Bally Gaming International, Inc. Gaming machine having truly random results
US5885428A (en) * 1996-12-04 1999-03-23 Applied Materials, Inc. Method and apparatus for both mechanically and electrostatically clamping a wafer to a pedestal within a semiconductor wafer processing system
US5748435A (en) * 1996-12-30 1998-05-05 Applied Materials, Inc. Apparatus for controlling backside gas pressure beneath a semiconductor wafer
US6189482B1 (en) 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US5937541A (en) * 1997-09-15 1999-08-17 Siemens Aktiengesellschaft Semiconductor wafer temperature measurement and control thereof using gas temperature measurement
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6110556A (en) * 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
US6293749B1 (en) 1997-11-21 2001-09-25 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
US6287977B1 (en) 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6572814B2 (en) * 1998-09-08 2003-06-03 Applied Materials Inc. Method of fabricating a semiconductor wafer support chuck apparatus having small diameter gas distribution ports for distributing a heat transfer gas
US6639783B1 (en) * 1998-09-08 2003-10-28 Applied Materials, Inc. Multi-layer ceramic electrostatic chuck with integrated channel
DE19853605A1 (de) * 1998-11-20 2000-05-25 Philips Corp Intellectual Pty Verfahren und Anordnung zur Herstellung einer Leuchtschicht
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6635580B1 (en) * 1999-04-01 2003-10-21 Taiwan Semiconductor Manufacturing Co. Ltd. Apparatus and method for controlling wafer temperature in a plasma etcher
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US20010035403A1 (en) 2000-05-18 2001-11-01 Albert Wang Method and structure for producing flat wafer chucks
US6628503B2 (en) 2001-03-13 2003-09-30 Nikon Corporation Gas cooled electrostatic pin chuck for vacuum applications
EP1254606A1 (en) * 2001-05-04 2002-11-06 Philip Morris Products S.A. Apparatus and method for delaminating parcels of tobacco
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
CN1249777C (zh) * 2001-08-27 2006-04-05 松下电器产业株式会社 等离子体处理装置及等离子体处理方法
TW561515B (en) * 2001-11-30 2003-11-11 Tokyo Electron Ltd Processing device, and gas discharge suppressing member
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
JP4186536B2 (ja) * 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
US20040045813A1 (en) * 2002-09-03 2004-03-11 Seiichiro Kanno Wafer processing apparatus, wafer stage, and wafer processing method
WO2004082007A1 (ja) * 2003-03-12 2004-09-23 Tokyo Electron Limited 半導体処理用の基板保持構造及びプラズマ処理装置
US7033443B2 (en) * 2003-03-28 2006-04-25 Axcelis Technologies, Inc. Gas-cooled clamp for RTP
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
US6956308B2 (en) * 2003-07-15 2005-10-18 Nikon Corporation Dual flow circulation system for a mover
US7355308B2 (en) * 2003-08-21 2008-04-08 Nikon Corporation Mover combination with two circulation flows
US20060051966A1 (en) * 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US7780793B2 (en) * 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
JP4636807B2 (ja) * 2004-03-18 2011-02-23 キヤノン株式会社 基板保持装置およびそれを用いた露光装置
US20050229854A1 (en) * 2004-04-15 2005-10-20 Tokyo Electron Limited Method and apparatus for temperature change and control
US7133120B2 (en) * 2004-05-04 2006-11-07 Asml Netherlands B.V. Lithographic apparatus, article support member, and method
US20080073563A1 (en) * 2006-07-01 2008-03-27 Nikon Corporation Exposure apparatus that includes a phase change circulation system for movers
US7972444B2 (en) * 2007-11-07 2011-07-05 Mattson Technology, Inc. Workpiece support with fluid zones for temperature control
US8092606B2 (en) * 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
WO2011043063A1 (ja) * 2009-10-05 2011-04-14 キヤノンアネルバ株式会社 基板冷却装置、スパッタリング装置および電子デバイスの製造方法
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US10537013B2 (en) * 2012-04-23 2020-01-14 Applied Materials, Inc. Distributed electro-static chuck cooling
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
GB201402126D0 (en) * 2014-02-07 2014-03-26 Spts Technologies Ltd Method of processing a substrate
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
JP7332614B2 (ja) * 2018-03-23 2023-08-23 アプライド マテリアルズ インコーポレイテッド 分離した裏側ヘリウム供給システム
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11145532B2 (en) * 2018-12-21 2021-10-12 Toto Ltd. Electrostatic chuck
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313783A (en) * 1980-05-19 1982-02-02 Branson International Plasma Corporation Computer controlled system for processing semiconductor wafers
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
JPS57149734A (en) * 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device

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